power transistors 1 publication date: april 2003 sjd00283bed 2SD1266, 2SD1266a silicon npn triple diffusion planar type for power amplification features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector-emitter saturation voltage v ce(sat) ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package parameter symbol rating unit collector-base voltage 2SD1266 v cbo 60 v (emitter open) 2SD1266a 80 collector-emitter voltage 2SD1266 v ceo 60 v (base open) 2SD1266a 80 emitter-base voltage (collector open) v ebo 6v collector current i c 3a peak collector current i cp 5a collector power t c = 25 cp c 35 w dissipation 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2SD1266 v ceo i c = 30 ma, i b = 060v (base open) 2SD1266a 80 base-emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v collector-emitter cutoff 2SD1266 i ces v ce = 60 v, v be = 0 200 a current (e-b short) 2SD1266a v ce = 80 v, v be = 0 200 collector-emitter cutoff 2SD1266 i ceo v ce = 30 v, i b = 0 300 a current (base open) 2SD1266a v ce = 60 v, i b = 0 300 emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 01ma forward current transfer ratio h fe1 * v ce = 4 v, i c = 1 a 70 320 ? h fe2 v ce = 4 v, i c = 3 a 10 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.375 a 1.2 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a, i b1 = 0.1 a, i b2 = ? 0.1 ma 0.5 s storage time t stg v cc = 50 v 2.5 s fall time t f 0.4 s 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q p o h fe1 70 to 150 120 to 250 160 to 320
2SD1266, 2SD1266a 2 sjd00283bed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 160 40 120 80 0 50 40 30 20 10 (1) t c = t a (2) with a 100 100 2 mm al heat sink (3) with a 50 50 2 mm al heat sink (4) without heat sink (p c = 2 w) (1) (2) (3) (4) collector power dissipation p c (w) ambient temperature t a ( c) 012 10 8 26 4 0 5 4 3 2 1 t c = 25 c i b = 100 ma 90 ma 80ma 70 ma 60 ma 40 ma 30 ma 20 ma 10 ma 50 ma collector current i c (a) collector-emitter voltage v ce (v) 0 2.4 2.0 1.6 0.4 1.2 0.8 0 8 6 2 4 t c = 100 c 25 c ? 25 c v ce = 4 v base-emitter voltage v be (v) collector current i c (a) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c /i b = 8 t c = 100?c 25?c ?5 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) 0.01 0.1 1 10 1 10 10 2 10 4 10 3 v ce = 4 v t c = 100?c 25 c ? 25 c forward current transfer ratio h fe collector current i c (a) 0.01 0.1 1 10 1 10 10 2 10 4 10 3 v ce = 5 v f = 10 mhz t c = 25?c transition frequency f t (mhz) collector current i c (a) 1 10 100 1000 0.01 0.1 1 10 100 non repetitive pulse t c = 25?c i cp i c 10 ms dc t = 1ms 2SD1266 2SD1266a collector current i c (a) collector-emitter voltage v ce (v) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) without heat sink (2) with a 100 100 2 mm al heat sink (1) (2) time t (s) thermal resistance r th ( c/w)
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